TS number
gold, nickel
Case type
401.14-5М, 401.14-5НБ
Price on demand
  • Technical characteristics
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Transistor packs type 1НТ251(A)/1НТ251(A)/KM consisting of four n-p-n silicon epitaxial transistors are designed to operate in special-purpose electronic equipment.

Main electrical parameters

Parameter name, unit of measurement Parameter symbol Standard
at least at most
Ambient temperature, °С Т -60 125
Maximum permissible collector-base DC voltage, V, UCB MAX 45
Maximum collector-emitter DC voltage, V, Reb ≤ 1 kOhm UCEMAX 45
Maximum emitter-base voltage, V UEBMAX 4
Maximum direct current of collector, mA ICMAX 400
Maximum pulse current of collector, mA ICP MAX 800
Maximum total constant dissipation power of collectors, W РCMAX 0,4
Maximum pulse dissipation power of collectors, W РCPMAX 10,0